| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| DMG1013T-7 | Diodes Inc | MOSFET P-CH 20V 460MA SOT523 | 0 | 3,000:$0.05060 6,000:$0.04400 15,000:$0.03740 30,000:$0.03520 75,000:$0.03300 150,000:$0.02860 |
| DMN2400UFB4-7 | Diodes Inc | MOSFET N-CH 20V 750MA DFN1006H4 | 0 | 1:$0.40000 10:$0.36200 25:$0.26080 100:$0.20280 250:$0.12744 500:$0.10858 1,000:$0.07398 2,500:$0.06667 5,000:$0.05795 |
| DMN2400UFB4-7 | Diodes Inc | MOSFET N-CH 20V 750MA DFN1006H4 | 0 | 1:$0.40000 10:$0.36200 25:$0.26080 100:$0.20280 250:$0.12744 500:$0.10858 1,000:$0.07398 2,500:$0.06667 5,000:$0.05795 |
| DMN2400UFB4-7 | Diodes Inc | MOSFET N-CH 20V 750MA DFN1006H4 | 0 | 10,000:$0.04782 30,000:$0.04501 50,000:$0.04220 100,000:$0.03741 250,000:$0.03657 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET P 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 460mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 700 毫欧 @ 350mA，4.5V |
| Id 时的 Vgs(th)（最大）: | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 0.622nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | 59.76pF @ 16V |
| 功率 - 最大: | 270mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | SOT-523 |
| 供应商设备封装: | SOT-523 |
| 包装: | 带卷 (TR) |