| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| IRFZ44STRLPBF | Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | 0 | 800:$1.14975 |
| SI7403BDN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1212-8 PPAK | 740 | 1:$0.95000 25:$0.75000 100:$0.67500 250:$0.58752 500:$0.52500 1,000:$0.41250 |
| SI7403BDN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1212-8 PPAK | 740 | 1:$0.95000 25:$0.75000 100:$0.67500 250:$0.58752 500:$0.52500 1,000:$0.41250 |
| SI7403BDN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1212-8 PPAK | 0 | 3,000:$0.35000 6,000:$0.33250 15,000:$0.31875 30,000:$0.31000 75,000:$0.30000 |
| SIE848DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 1:$2.98000 25:$2.29520 100:$2.08250 250:$1.87000 500:$1.61500 1,000:$1.36000 |
| SI4056DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S 8SOIC | 75 | 1:$1.01000 25:$0.78200 100:$0.69000 250:$0.59800 500:$0.50600 1,000:$0.40250 |
| SI4056DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S 8SOIC | 75 | 1:$1.01000 25:$0.78200 100:$0.69000 250:$0.59800 500:$0.50600 1,000:$0.40250 |
| SI4056DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S 8SOIC | 0 | 2,500:$0.33350 5,000:$0.31050 12,500:$0.29900 25,000:$0.28750 62,500:$0.28290 125,000:$0.27600 |
| SIE848DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 1:$2.98000 25:$2.29520 100:$2.08250 250:$1.87000 500:$1.61500 1,000:$1.36000 |
| SQD50N06-07L-GE3 | Vishay Siliconix | MOSFET N-CH 60V 50A TO252 | 0 | 2,000:$1.72900 |
| SI4886DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 9.5A 8-SOIC | 0 | 2,500:$1.71570 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 60V |
| 电流 - 连续漏极(Id) @ 25° C: | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 28 毫欧 @ 31A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 67nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 1900pF @ 25V |
| 功率 - 最大: | 3.7W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装: | D2PAK |
| 包装: | 带卷 (TR) |