| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SUD50N06-08H-E3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO252 | 0 | 2,000:$1.71570 |
| IRLZ24SPBF | Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | 0 | 1,000:$0.90045 |
| SI2333DS-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V SOT23-3 | 0 | 3,000:$0.22475 |
| SQD25N06-22L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V 25A TO252 | 0 | 2,000:$0.89100 |
| SIE862DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 3,000:$0.89100 |
| SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 38 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 38 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SQ3419EEV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 7.4A 6TSOP | 0 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 60V |
| 电流 - 连续漏极(Id) @ 25° C: | 93A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 7.8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）: | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 145nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 7000pF @ 25V |
| 功率 - 最大: | 3W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装: | TO-252，（D-Pak） |
| 包装: | 带卷 (TR) |