| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI5471DC-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1206-8 | 15,000 | 3,000:$0.27550 6,000:$0.25650 15,000:$0.24700 30,000:$0.23750 75,000:$0.23370 150,000:$0.22800 |
| SI4892DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.99900 |
| SI1413DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V SC-70-6 | 0 | 3,000:$0.26245 |
| SI5429DU-T1-GE3 | Vishay Siliconix | MOSF P CH 30V 12A PWR PK | 95 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI5429DU-T1-GE3 | Vishay Siliconix | MOSF P CH 30V 12A PWR PK | 95 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI5429DU-T1-GE3 | Vishay Siliconix | MOSF P CH 30V 12A PWR PK | 0 | 3,000:$0.26100 6,000:$0.24300 15,000:$0.23400 30,000:$0.22500 75,000:$0.22140 150,000:$0.21600 |
| SI8416DB-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 16A MICRO | 0 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI8416DB-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 16A MICRO | 0 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| IRF740ASTRRPBF | Vishay Siliconix | MOSFET N-CH 400V 10A D2PAK | 0 | 800:$0.97965 |
| SI4864DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 8-SOIC | 0 | 2,500:$2.02160 |
| SI4412ADY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.26100 |
| SI4456DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 33A 8-SOIC | 0 | 2,500:$0.96930 |
| SI4410BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.26100 |
| SIRA14DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S SO-8 | 0 | 1:$0.77000 25:$0.59680 100:$0.52650 250:$0.45632 500:$0.38610 1,000:$0.30713 |
| SIRA14DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S SO-8 | 0 | 1:$0.77000 25:$0.59680 100:$0.52650 250:$0.45632 500:$0.38610 1,000:$0.30713 |
| SIRA14DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S SO-8 | 0 | 3,000:$0.25448 6,000:$0.23693 15,000:$0.22815 30,000:$0.21938 75,000:$0.21587 150,000:$0.21060 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET P 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 20 毫欧 @ 9.1A，4.5V |
| Id 时的 Vgs(th)（最大）: | 1.1V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 96nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 2945pF @ 10V |
| 功率 - 最大: | 6.3W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SMD，扁平引线 |
| 供应商设备封装: | 1206-8 ChipFET? |
| 包装: | 带卷 (TR) |