元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SQ4840EY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8SOIC | 0 | 2,500:$1.12455 |
SI1300BDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-3 | 0 | 1:$0.58000 25:$0.38000 100:$0.31200 250:$0.26000 500:$0.21600 1,000:$0.16000 |
IRLR024TRLPBF | Vishay Siliconix | MOSFET N-CH 60V 14A DPAK | 0 | 3,000:$0.73170 |
SIE878DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V POLARPAK | 0 | 1:$1.80000 25:$1.39040 100:$1.26180 250:$1.13300 500:$0.97850 1,000:$0.82400 |
SQD50P06-15L-GE3 | Vishay Siliconix | MOSFET P-CH 60V 50A TO252 | 0 | 2,000:$1.28250 |
SQD50P04-09L-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V TO252 | 0 | 2,000:$1.28250 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 40V |
电流 - 连续漏极(Id) @ 25° C: | 20.7A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 9 毫欧 @ 14A,10V |
Id 时的 Vgs(th)(最大): | 2.5V @ 250µA |
闸电荷(Qg) @ Vgs: | 62nC @ 10V |
输入电容 (Ciss) @ Vds: | 2440pF @ 20V |
功率 - 最大: | 7.1W |
安装类型: | 表面贴装 |
封装/外壳: | 8-SOIC(0.154",3.90mm 宽) |
供应商设备封装: | 8-SOICN |
包装: | 带卷 (TR) |