| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI4626ADY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 8-SOIC | 0 | 2,500:$0.76005 |
| SI7392DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PPAK 8SOIC | 0 | 3,000:$0.75600 |
| SI1488DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 6.1A SC70-6 | 0 | 3,000:$0.20925 |
| SI1405BDH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 0 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SI1405BDH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 0 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SIRA02DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 50A SO-8 | 0 | 1:$2.00000 25:$1.53920 100:$1.39650 250:$1.25400 500:$1.08300 1,000:$0.91200 |
| SI1405BDH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 0 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| 2N7002-E3 | Vishay Siliconix | MOSFET N-CH 60V 115MA SOT23 | 0 | 1,000:$0.20400 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 3.3 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 125nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 5370pF @ 15V |
| 功率 - 最大: | 6W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装: | 8-SOICN |
| 包装: | 带卷 (TR) |