元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SQ1420EEH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 1.6A SC70-6 | 0 | 3,000:$0.18600 6,000:$0.17400 15,000:$0.16200 30,000:$0.15300 75,000:$0.15000 150,000:$0.14400 |
SQ1421EEH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 1.6A SC70-6 | 0 | 1:$0.66000 25:$0.46200 100:$0.39600 250:$0.34200 500:$0.29400 1,000:$0.22800 |
SIHP8N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 8.7A TO220AB | 50 | 1:$1.90000 25:$1.49760 100:$1.34780 250:$1.17312 500:$1.04832 |
SIHP8N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 8.7A TO220AB | 0 | 1,000:$0.74880 2,000:$0.69888 5,000:$0.66394 10,000:$0.63648 25,000:$0.61901 50,000:$0.59904 |
IRL510STRLPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | 0 | 800:$0.74534 |
SIA461DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC706L | 3,000 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
SIA461DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC706L | 3,000 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
SIA461DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC706L | 0 | 3,000:$0.13950 6,000:$0.13050 15,000:$0.12150 30,000:$0.11475 75,000:$0.11250 150,000:$0.10800 |
SI1401EDH-T1-GE3 | Vishay Siliconix | MOSFET P-CH F-D 12V SC-70-6 | 0 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
SQ1421EEH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 1.6A SC70-6 | 0 | 3,000:$0.18600 6,000:$0.17400 15,000:$0.16200 30,000:$0.15300 75,000:$0.15000 150,000:$0.14400 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 60V |
电流 - 连续漏极(Id) @ 25° C: | 1.6A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 140 毫欧 @ 1.2A,10V |
Id 时的 Vgs(th)(最大): | 2.5V @ 250µA |
闸电荷(Qg) @ Vgs: | 4nC @ 4.5V |
输入电容 (Ciss) @ Vds: | 215pF @ 25V |
功率 - 最大: | 3.3W |
安装类型: | 表面贴装 |
封装/外壳: | 6-TSSOP,SC-88,SOT-363 |
供应商设备封装: | SC-70-6 |
包装: | 带卷 (TR) |