元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SQD45P03-12-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V TO252 | 0 | 2,000:$0.70200 |
SI1315DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 900MA SC70-3 | 0 | 3,000:$0.10725 |
SQD50P04-13L-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V TO252 | 0 | 2,000:$1.28250 |
SI7457DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 100V PPAK 8SOIC | 0 | 3,000:$1.28250 |
SI7455DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 80V PPAK 8SOIC | 0 | 3,000:$1.28250 |
SIJ482DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 60A SO-8 | 5 | 1:$2.03000 25:$1.56600 100:$1.42100 250:$1.27600 500:$1.10200 1,000:$0.92800 |
SI7455DP-T1-E3 | Vishay Siliconix | MOSFET P-CH D-S 80V PPAK 8SOIC | 0 | 3,000:$1.28250 |
SI4866DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 11A 8-SOIC | 0 | 2,500:$0.78300 |
SI4890DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 11A 8-SOIC | 0 | 2,500:$1.28250 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET P 通道,金属氧化物 |
FET 特点: | 标准 |
漏极至源极电压(Vdss): | 30V |
电流 - 连续漏极(Id) @ 25° C: | 50A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 12 毫欧 @ 15A,10V |
Id 时的 Vgs(th)(最大): | 2.5V @ 250µA |
闸电荷(Qg) @ Vgs: | 83nC @ 10V |
输入电容 (Ciss) @ Vds: | 3495pF @ 15V |
功率 - 最大: | 71W |
安装类型: | 表面贴装 |
封装/外壳: | TO-252-3,DPak(2 引线+接片),SC-63 |
供应商设备封装: | TO-252,(D-Pak) |
包装: | 带卷 (TR) |