| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SIJ400DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PPAK SO-8L | 0 | 3,000:$0.67500 |
| SIRA12DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 25A SO8 PWR PK | 0 | 3,000:$0.39200 6,000:$0.37240 15,000:$0.35700 30,000:$0.34720 75,000:$0.33600 |
| SI4090DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S 8SOIC | 0 | 2,500:$0.60200 5,000:$0.57190 12,500:$0.54825 25,000:$0.53320 62,500:$0.51600 |
| SI4646DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH/SCHOTTKY 30V 8SOIC | 0 | 2,500:$0.42000 |
| SI7682DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$0.41860 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 4 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 150nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 7765pF @ 15V |
| 功率 - 最大: | 69.4W |
| 安装类型: | * |
| 封装/外壳: | PowerPAK? SO-8 |
| 供应商设备封装: | PowerPAK? SO-8 |
| 包装: | 带卷 (TR) |