元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SI3495DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 5.3A 6-TSOP | 0 | 3,000:$0.45500 |
SI7388DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PPAK 8SOIC | 0 | 3,000:$0.45220 |
SI7810DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 1212-8 PPAK | 0 | 1:$1.23000 25:$0.96920 100:$0.87210 250:$0.75904 500:$0.67830 1,000:$0.53295 |
SI7810DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 1212-8 PPAK | 0 | 1:$1.23000 25:$0.96920 100:$0.87210 250:$0.75904 500:$0.67830 1,000:$0.53295 |
SI7810DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 1212-8 PPAK | 0 | 3,000:$0.45220 6,000:$0.42959 15,000:$0.41183 30,000:$0.40052 75,000:$0.38760 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET P 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 20V |
电流 - 连续漏极(Id) @ 25° C: | 5.3A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 24 毫欧 @ 7A,4.5V |
Id 时的 Vgs(th)(最大): | 750mV @ 250µA |
闸电荷(Qg) @ Vgs: | 38nC @ 4.5V |
输入电容 (Ciss) @ Vds: | - |
功率 - 最大: | 1.1W |
安装类型: | 表面贴装 |
封装/外壳: | 6-TSOP(0.065",1.65mm 宽) |
供应商设备封装: | 6-TSOP |
包装: | 带卷 (TR) |