| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| BUK965R8-100E,118 | NXP Semiconductors | MOSFET N-CH 100V 120A D2PAK | 0 | 1:$3.38000 10:$3.02800 25:$2.72280 100:$2.47630 250:$2.24156 |
| BUK965R8-100E,118 | NXP Semiconductors | MOSFET N-CH 100V 120A D2PAK | 0 | 1:$3.38000 10:$3.02800 25:$2.72280 100:$2.47630 250:$2.24156 |
| PSMN070-200P,127 | NXP Semiconductors | MOSFET N-CH 200V 35A SOT78 | 2,000 | 1,000:$1.08560 |
| BUK654R6-55C,127 | NXP Semiconductors | MOSFET N-CH TRENCH SOT78A | 4,808 | 1:$1.90000 10:$1.72000 25:$1.53560 100:$1.38220 250:$1.22860 500:$1.07502 1,000:$0.89074 2,500:$0.82930 5,000:$0.79859 |
| PSMN5R6-100PS,127 | NXP Semiconductors | MOSFET N-CH 100V 100A TO220AB | 8,980 | 1:$2.83000 10:$2.55900 25:$2.28520 100:$2.05670 250:$1.82820 500:$1.59968 1,000:$1.32545 2,500:$1.23404 5,000:$1.18833 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 100V |
| 电流 - 连续漏极(Id) @ 25° C: | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 5.8 毫欧 @ 25A，5V |
| Id 时的 Vgs(th)（最大）: | 2.1V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 133nC @ 5V |
| 输入电容 (Ciss) @ Vds: | 17460pF @ 25V |
| 功率 - 最大: | 357W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装: | D2PAK |
| 包装: | Digi-Reel® |