| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI8461DB-T2-E1 | Vishay Siliconix | MOSFET P-CH D-S 20V MICROFOOT | 9,000 | 3,000:$0.21750 6,000:$0.20250 15,000:$0.19500 30,000:$0.18750 75,000:$0.18450 150,000:$0.18000 |
| SQ1431EH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 3A SC70 | 677 | 1:$0.66000 25:$0.46200 100:$0.39600 250:$0.34200 500:$0.29400 1,000:$0.22800 |
| SQ1431EH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 3A SC70 | 677 | 1:$0.66000 25:$0.46200 100:$0.39600 250:$0.34200 500:$0.29400 1,000:$0.22800 |
| SQ1431EH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 3A SC70 | 0 | 3,000:$0.18600 6,000:$0.17400 15,000:$0.16200 30,000:$0.15300 75,000:$0.15000 150,000:$0.14400 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET P 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | - |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 100 毫欧 @ 1.5A，4.5V |
| Id 时的 Vgs(th)（最大）: | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 24nC @ 8V |
| 输入电容 (Ciss) @ Vds: | 610pF @ 10V |
| 功率 - 最大: | 780mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 4-XFBGA，CSPBGA |
| 供应商设备封装: | 4-Microfoot |
| 包装: | 带卷 (TR) |