| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PSMN4R6-60PS,127 | NXP Semiconductors | MOSFET N-CH 60V SOT78 | 1,000 | 1,000:$0.73680 |
| PSMN4R6-60PS,127 | NXP Semiconductors | MOSFET N-CH 60V SOT78 | 4,634 | 1:$1.75000 10:$1.58100 25:$1.41160 100:$1.27040 250:$1.12920 500:$0.98806 1,000:$0.81867 2,500:$0.76221 5,000:$0.73398 |
| BUK7Y12-55B,115 | NXP Semiconductors | MOSFET N-CH 55V 61.8A LFPAK | 1,001 | 1:$1.72000 10:$1.52400 25:$1.37600 100:$1.20410 250:$1.05592 500:$0.93648 |
| BUK7Y12-55B,115 | NXP Semiconductors | MOSFET N-CH 55V 61.8A LFPAK | 1,001 | 1:$1.72000 10:$1.52400 25:$1.37600 100:$1.20410 250:$1.05592 500:$0.93648 |
| BUK7Y12-55B,115 | NXP Semiconductors | MOSFET N-CH 55V 61.8A LFPAK | 0 | 1,500:$0.71700 3,000:$0.66900 7,500:$0.63500 10,500:$0.61200 37,500:$0.59200 75,000:$0.57300 |
| PSMN3R5-80PS,127 | NXP Semiconductors | MOSFET N-CH 80V 120A TO220 | 997 | 1:$2.68000 10:$2.41900 25:$2.16000 100:$1.94400 250:$1.72800 500:$1.51200 1,000:$1.25280 2,500:$1.16640 5,000:$1.12320 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 60V |
| 电流 - 连续漏极(Id) @ 25° C: | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 4.6 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 70.8nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 4426pF @ 30V |
| 功率 - 最大: | 211W |
| 安装类型: | 通孔 |
| 封装/外壳: | TO-220-3 |
| 供应商设备封装: | TO-220AB |
| 包装: | 管件 |