| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PSMN2R0-60PS,127 | NXP Semiconductors | MOSFET N-CH 60V 120A TO220 | 2,858 | 1:$3.36000 10:$3.00000 25:$2.70000 100:$2.46000 250:$2.22000 500:$1.99200 1,000:$1.68000 2,500:$1.59600 5,000:$1.53600 |
| BUK652R1-30C,127 | NXP Semiconductors | MOSFET N-CH TRENCH SOT78A | 4,998 | 1:$2.61000 10:$2.36200 25:$2.10840 100:$1.89770 250:$1.68680 500:$1.47596 1,000:$1.22293 2,500:$1.13859 5,000:$1.09642 |
| BUK652R6-40C,127 | NXP Semiconductors | MOSFET N-CH TRENCH SOT78A | 5,000 | 1:$2.61000 10:$2.36200 25:$2.10840 100:$1.89770 250:$1.68680 500:$1.47596 1,000:$1.22293 2,500:$1.13859 5,000:$1.09642 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 60V |
| 电流 - 连续漏极(Id) @ 25° C: | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 2.2 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 137nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 9997pF @ 30V |
| 功率 - 最大: | 338W |
| 安装类型: | 通孔 |
| 封装/外壳: | TO-220-3 |
| 供应商设备封装: | TO-220AB |
| 包装: | 管件 |