| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PSMN3R5-30LL,115 | NXP Semiconductors | MOSFET N-CH 30V QFN3333 | 1,330 | 1:$1.04000 10:$0.91500 25:$0.82600 100:$0.72270 250:$0.63384 500:$0.56212 |
| PMN38EN,135 | NXP Semiconductors | MOSFET N-CH 30V 5.4A 6TSOP | 9,522 | 1:$0.54000 10:$0.45800 25:$0.40120 100:$0.34330 250:$0.29776 500:$0.25220 1,000:$0.19443 2,500:$0.17776 5,000:$0.16554 |
| PH2925U,115 | NXP Semiconductors | MOSFET N-CH 25V 100A LFPAK | 1,500 | 1,500:$1.33100 3,000:$1.23900 7,500:$1.19300 10,500:$1.14800 37,500:$1.12900 75,000:$1.10200 |
| PMN28UN,135 | NXP Semiconductors | MOSFET N-CH 12V 5.7A 6TSOP | 9,830 | 1:$0.54000 10:$0.45800 25:$0.40120 100:$0.34330 250:$0.29776 500:$0.25220 1,000:$0.19443 2,500:$0.17776 5,000:$0.16554 |
| PMN28UN,135 | NXP Semiconductors | MOSFET N-CH 12V 5.7A SOT457 | 0 | 10,000:$0.15000 30,000:$0.14200 50,000:$0.13900 100,000:$0.13700 250,000:$0.13300 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 3.6 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）: | 2.15V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 37nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 2061pF @ 15V |
| 功率 - 最大: | 71W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-VDFN 裸露焊盘 |
| 供应商设备封装: | 8-QFN（3.3x3.3） |
| 包装: | 剪切带 (CT) |