| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| BUK9Y14-40B,115 | NXP Semiconductors | MOSFET N-CH TRENCH 40V LFPAK | 0 | 1,500:$0.50100 3,000:$0.46700 7,500:$0.44400 10,500:$0.42700 37,500:$0.41400 75,000:$0.40100 |
| PMN23UN,135 | NXP Semiconductors | MOSFET N-CH 20V 6.3A 6TSOP | 9,875 | 1:$0.54000 10:$0.45300 25:$0.39720 100:$0.33990 250:$0.29480 500:$0.24970 1,000:$0.19250 2,500:$0.17600 5,000:$0.16390 |
| PMN23UN,165 | NXP Semiconductors | MOSFET N-CH 20V 6.3A 6TSOP | 0 | 10,000:$0.15000 |
| PSMN3R8-30LL,115 | NXP Semiconductors | MOSFET N-CH 30V QFN3333 | 1,365 | 1:$1.04000 10:$0.91500 25:$0.82600 100:$0.72270 250:$0.63384 500:$0.56212 |
| PSMN027-100XS,127 | NXP Semiconductors | MOSFET N CH 100V 23.4A TO220F | 1,038 | 1:$1.20000 10:$1.06000 25:$0.95720 100:$0.83740 250:$0.73488 500:$0.64942 1,000:$0.51270 2,500:$0.47852 5,000:$0.45459 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 40V |
| 电流 - 连续漏极(Id) @ 25° C: | 56A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 11 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）: | 2V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 21nC @ 5V |
| 输入电容 (Ciss) @ Vds: | 1800pF @ 25V |
| 功率 - 最大: | 85W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | SC-100，SOT-669，4-LFPAK |
| 供应商设备封装: | LFPAK，Power-SO8 |
| 包装: | 带卷 (TR) |