| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PSMN015-100B,118 | NXP Semiconductors | MOSFET N-CH 100V 75A SOT404 | 1,748 | 1:$2.30000 10:$2.07400 25:$1.85760 100:$1.67040 250:$1.48320 |
| PSMN015-100B,118 | NXP Semiconductors | MOSFET N-CH 100V 75A SOT404 | 1,748 | 1:$2.30000 10:$2.07400 25:$1.85760 100:$1.67040 250:$1.48320 |
| PSMN130-200D,118 | NXP Semiconductors | MOSFET N-CH 200V 20A SOT428 | 9,495 | 1:$1.78000 10:$1.57200 25:$1.41920 100:$1.24190 250:$1.08908 500:$0.96588 1,000:$0.76384 |
| PSMN130-200D,118 | NXP Semiconductors | MOSFET N-CH 200V 20A SOT428 | 9,495 | 1:$1.78000 10:$1.57200 25:$1.41920 100:$1.24190 250:$1.08908 500:$0.96588 1,000:$0.76384 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 100V |
| 电流 - 连续漏极(Id) @ 25° C: | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 15 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 90nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 4900pF @ 25V |
| 功率 - 最大: | 300W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装: | D2PAK |
| 包装: | Digi-Reel® |