| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| BSP030,115 | NXP Semiconductors | MOSFET N-CH 30V 10A SOT223 | 4,000 | 1,000:$0.46900 2,000:$0.43800 5,000:$0.41600 10,000:$0.40000 25,000:$0.38800 50,000:$0.37500 |
| BUK7Y18-55B,115 | NXP Semiconductors | MOSFET N-CH 55V 47.4A LFPAK | 1,447 | 1:$1.29000 10:$1.14000 25:$1.02920 100:$0.90040 250:$0.78964 500:$0.70030 |
| PSMN7R0-60YS,115 | NXP Semiconductors | MOSFET N-CH 60V LFPAK | 3,150 | 1:$1.26000 10:$1.11500 25:$1.00640 100:$0.88070 250:$0.77240 500:$0.68502 |
| BUK9225-55A,118 | NXP Semiconductors | MOSFET N-CH 55V 43A DPAK | 0 | 2,500:$0.43652 5,000:$0.41469 12,500:$0.39910 25,000:$0.38663 62,500:$0.37416 |
| PSMN7R0-60YS,115 | NXP Semiconductors | MOSFET N-CH 60V LFPAK | 3,000 | 1,500:$0.52425 3,000:$0.48930 7,500:$0.46483 10,500:$0.44736 37,500:$0.43338 75,000:$0.41940 |
| BUK7Y18-55B,115 | NXP Semiconductors | MOSFET N-CH 55V 47.4A LFPAK | 0 | 1,500:$0.53600 3,000:$0.50000 7,500:$0.47500 10,500:$0.45700 37,500:$0.44300 75,000:$0.42900 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 30 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）: | 2.8V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 770pF @ 24V |
| 功率 - 最大: | 8.3W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-261-4，TO-261AA |
| 供应商设备封装: | SC-73 |
| 包装: | 带卷 (TR) |