元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
BUK662R5-30C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,790 | 1:$2.04000 10:$1.84500 25:$1.65320 100:$1.48640 250:$1.31984 |
PSMN4R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A SOT669 | 2,437 | 1:$0.97000 10:$0.85700 25:$0.77400 100:$0.67740 250:$0.59404 500:$0.52684 |
BUK662R5-30C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,000 | 800:$1.01230 1,600:$0.92901 2,400:$0.86495 5,600:$0.83291 20,000:$0.80088 40,000:$0.78806 80,000:$0.76884 |
PSMN4R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A SOT669 | 1,500 | 1,500:$0.40320 3,000:$0.37632 7,500:$0.35750 10,500:$0.34406 37,500:$0.33331 75,000:$0.32256 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 30V |
电流 - 连续漏极(Id) @ 25° C: | 100A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 2.8 毫欧 @ 25A,10V |
Id 时的 Vgs(th)(最大): | 2.8V @ 1mA |
闸电荷(Qg) @ Vgs: | 114nC @ 10V |
输入电容 (Ciss) @ Vds: | 6960pF @ 25V |
功率 - 最大: | 204W |
安装类型: | 表面贴装 |
封装/外壳: | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
供应商设备封装: | D2PAK |
包装: | 剪切带 (CT) |