元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
PSMN6R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 79A LFPAK | 1,500 | 1,500:$0.27101 |
PSMN6R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 79A LFPAK | 2,654 | 1:$0.78000 10:$0.67900 25:$0.60040 100:$0.52320 250:$0.45544 500:$0.38770 |
PSMN5R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 91A LFPAK | 1,500 | 1,500:$0.27101 |
PSMN5R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 91A LFPAK | 5,639 | 1:$0.78000 10:$0.67900 25:$0.60040 100:$0.52320 250:$0.45544 500:$0.38770 |
PSMN5R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 91A LFPAK | 5,639 | 1:$0.78000 10:$0.67900 25:$0.60040 100:$0.52320 250:$0.45544 500:$0.38770 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 30V |
电流 - 连续漏极(Id) @ 25° C: | 79A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 6 毫欧 @ 15A,10V |
Id 时的 Vgs(th)(最大): | 2.15V @ 1mA |
闸电荷(Qg) @ Vgs: | 24nC @ 10V |
输入电容 (Ciss) @ Vds: | 1425pF @ 12V |
功率 - 最大: | 55W |
安装类型: | 表面贴装 |
封装/外壳: | SC-100,SOT-669,4-LFPAK |
供应商设备封装: | LFPAK,Power-SO8 |
包装: | 带卷 (TR) |