分离式半导体产品 PMR370XN,115品牌、价格、PDF参数

PMR370XN,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PMR370XN,115 NXP Semiconductors MOSFET N-CH 30V 0.84A SOT416 3,000 3,000:$0.11400
6,000:$0.10700
15,000:$0.10000
30,000:$0.09200
75,000:$0.08800
150,000:$0.08500
PSMN010-25YLC,115 NXP Semiconductors MOSFET N-CH 25V 39A LL LFPAK 1,765 1:$0.54000
10:$0.45900
25:$0.40160
100:$0.34390
250:$0.29828
500:$0.25266
PSMN010-25YLC,115 NXP Semiconductors MOSFET N-CH 25V 39A LL LFPAK 1,765 1:$0.54000
10:$0.45900
25:$0.40160
100:$0.34390
250:$0.29828
500:$0.25266
BSS87,115 NXP Semiconductors MOSFET N-CH 200V 400MA SOT-89 5,875 1:$0.50000
10:$0.42000
25:$0.36840
100:$0.31520
250:$0.27336
500:$0.23154
PSMN010-25YLC,115 NXP Semiconductors MOSFET N-CH 25V LFPAK 1,500 1,500:$0.18921
3,000:$0.17252
7,500:$0.16139
10,500:$0.15026
37,500:$0.14246
75,000:$0.13913
150,000:$0.13356
PMR280UN,115 NXP Semiconductors MOSFET N-CH 20V 0.98A SOT416 3,000 3,000:$0.11400
6,000:$0.10700
15,000:$0.10000
30,000:$0.09200
75,000:$0.08800
150,000:$0.08500
PMR370XN,115 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 840mA
开态Rds(最大)@ Id, Vgs @ 25° C: 440 毫欧 @ 200mA,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 0.65nC @ 4.5V
输入电容 (Ciss) @ Vds: 37pF @ 25V
功率 - 最大: 530mW
安装类型: 表面贴装
封装/外壳: SC-75,SOT-416
供应商设备封装: SC-75
包装: 带卷 (TR)