元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
PMR370XN,115 | NXP Semiconductors | MOSFET N-CH 30V 0.84A SOT416 | 3,000 | 3,000:$0.11400 6,000:$0.10700 15,000:$0.10000 30,000:$0.09200 75,000:$0.08800 150,000:$0.08500 |
PSMN010-25YLC,115 | NXP Semiconductors | MOSFET N-CH 25V 39A LL LFPAK | 1,765 | 1:$0.54000 10:$0.45900 25:$0.40160 100:$0.34390 250:$0.29828 500:$0.25266 |
PSMN010-25YLC,115 | NXP Semiconductors | MOSFET N-CH 25V 39A LL LFPAK | 1,765 | 1:$0.54000 10:$0.45900 25:$0.40160 100:$0.34390 250:$0.29828 500:$0.25266 |
BSS87,115 | NXP Semiconductors | MOSFET N-CH 200V 400MA SOT-89 | 5,875 | 1:$0.50000 10:$0.42000 25:$0.36840 100:$0.31520 250:$0.27336 500:$0.23154 |
PSMN010-25YLC,115 | NXP Semiconductors | MOSFET N-CH 25V LFPAK | 1,500 | 1,500:$0.18921 3,000:$0.17252 7,500:$0.16139 10,500:$0.15026 37,500:$0.14246 75,000:$0.13913 150,000:$0.13356 |
PMR280UN,115 | NXP Semiconductors | MOSFET N-CH 20V 0.98A SOT416 | 3,000 | 3,000:$0.11400 6,000:$0.10700 15,000:$0.10000 30,000:$0.09200 75,000:$0.08800 150,000:$0.08500 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 30V |
电流 - 连续漏极(Id) @ 25° C: | 840mA |
开态Rds(最大)@ Id, Vgs @ 25° C: | 440 毫欧 @ 200mA,4.5V |
Id 时的 Vgs(th)(最大): | 1.5V @ 250µA |
闸电荷(Qg) @ Vgs: | 0.65nC @ 4.5V |
输入电容 (Ciss) @ Vds: | 37pF @ 25V |
功率 - 最大: | 530mW |
安装类型: | 表面贴装 |
封装/外壳: | SC-75,SOT-416 |
供应商设备封装: | SC-75 |
包装: | 带卷 (TR) |