| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| BSH108,215 | NXP Semiconductors | MOSFET N-CH 30V 1.9A SOT23 | 11,488 | 1:$0.62000 10:$0.52200 25:$0.45760 100:$0.39180 250:$0.33984 500:$0.28784 1,000:$0.22190 |
| PMR400UN,115 | NXP Semiconductors | MOSFET N-CH 30V 0.8A SOT416 | 3,263 | 1:$0.46000 10:$0.36100 25:$0.30480 100:$0.24840 250:$0.20572 500:$0.16994 1,000:$0.12728 |
| PSMN9R0-25YLC,115 | NXP Semiconductors | MOSFET N-CH 25V 46A LL LFPAK | 4,270 | 1:$0.56000 10:$0.47600 25:$0.41680 100:$0.35690 250:$0.30956 500:$0.26218 |
| PMR370XN,115 | NXP Semiconductors | MOSFET N-CH 30V 0.84A SOT416 | 5,265 | 1:$0.46000 10:$0.36100 25:$0.30480 100:$0.24840 250:$0.20572 500:$0.16994 1,000:$0.12728 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 1.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 120 毫欧 @ 1A，10V |
| Id 时的 Vgs(th)（最大）: | 2V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 190pF @ 10V |
| 功率 - 最大: | 830mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装: | TO-236AB |
| 包装: | 剪切带 (CT) |