| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PSMN9R5-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 44A LL LFPAK | 1,805 | 1:$0.56000 10:$0.47600 25:$0.41680 100:$0.35690 250:$0.30956 500:$0.26218 |
| BUK6211-75C,118 | NXP Semiconductors | MOSFET N-CH TRENCH DPAK SOT428 | 4,425 | 1:$1.78000 10:$1.57400 25:$1.42120 100:$1.24360 250:$1.09064 500:$0.96726 1,000:$0.76493 |
| BSH201,215 | NXP Semiconductors | MOSFET P-CH 60V 300MA SOT-23 | 10,227 | 1:$0.49000 10:$0.38100 25:$0.32120 100:$0.26170 250:$0.21676 500:$0.17908 1,000:$0.13413 |
| BUK6211-75C,118 | NXP Semiconductors | MOSFET N-CH TRENCH DPAK SOT428 | 4,425 | 1:$1.78000 10:$1.57400 25:$1.42120 100:$1.24360 250:$1.09064 500:$0.96726 1,000:$0.76493 |
| BSH201,215 | NXP Semiconductors | MOSFET P-CH 60V 300MA SOT-23 | 9,000 | 3,000:$0.12000 6,000:$0.11200 15,000:$0.10500 30,000:$0.09600 75,000:$0.09300 150,000:$0.08900 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 44A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 9.8 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）: | 1.95V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 10.4nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 681pF @ 15V |
| 功率 - 最大: | 34W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | SC-100，SOT-669，4-LFPAK |
| 供应商设备封装: | LFPAK，Power-SO8 |
| 包装: | 剪切带 (CT) |