分离式半导体产品 PSMN3R3-80PS,127品牌、价格、PDF参数

PSMN3R3-80PS,127 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN3R3-80PS,127 NXP Semiconductors MOSFET N-CH 80V 120A TO-220 398 1:$4.63000
10:$4.13000
25:$3.71720
100:$3.38660
250:$3.05620
500:$2.74232
1,000:$2.31280
2,500:$2.19716
5,000:$2.11456
BSS84,215 NXP Semiconductors MOSFET P-CH 50V 130MA SOT-23 269,367 1:$0.42000
10:$0.30100
25:$0.23440
100:$0.17750
250:$0.12544
500:$0.10042
1,000:$0.07703
2N7002BKW,115 NXP Semiconductors MOSFET N-CH 60V 310MA SOT323 12,000 3,000:$0.06300
6,000:$0.05500
15,000:$0.04700
30,000:$0.04400
75,000:$0.04100
150,000:$0.03600
BUK7210-55B,118 NXP Semiconductors MOSFET N-CH 55V SOT428 19,975 1:$1.68000
10:$1.48700
25:$1.34280
100:$1.17510
250:$1.03052
500:$0.91394
1,000:$0.72277
BUK7210-55B,118 NXP Semiconductors MOSFET N-CH 55V SOT428 17,500 2,500:$0.65300
5,000:$0.62000
12,500:$0.59700
25,000:$0.57800
62,500:$0.56000
BUK625R0-40C,118 NXP Semiconductors MOSFET N-CH TRENCH DPAK 9,962 1:$1.66000
10:$1.46800
25:$1.32520
100:$1.15970
250:$1.01704
500:$0.90200
1,000:$0.71331
PSMN3R3-80PS,127 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 80V
电流 - 连续漏极(Id) @ 25° C: 120A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.3 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 4V @ 1mA
闸电荷(Qg) @ Vgs: 139nC @ 10V
输入电容 (Ciss) @ Vds: 9961pF @ 40V
功率 - 最大: 338W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件