| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| DMN3730UFB4-7 | Diodes Inc | MOSFET N-CH 30V 750MA DFN | 8,493 | 1:$0.66000 10:$0.57800 25:$0.51040 100:$0.44480 250:$0.38720 500:$0.32960 1,000:$0.26400 |
| DMN3730UFB4-7 | Diodes Inc | MOSFET N-CH 30V 750MA DFN | 6,000 | 3,000:$0.23200 6,000:$0.21600 15,000:$0.20800 30,000:$0.20000 75,000:$0.19680 150,000:$0.19200 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 460 毫欧 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）: | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs: | 1.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | 64.3pF @ 25V |
| 功率 - 最大: | 470mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 3-XFDFN |
| 供应商设备封装: | 3-DFN |
| 包装: | 剪切带 (CT) |