| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PHP18NQ11T,127 | NXP Semiconductors | MOSFET N-CH 110V 18A TO220AB | 939 | 1:$1.40000 10:$1.24000 25:$1.12000 100:$0.98000 250:$0.86000 500:$0.76000 1,000:$0.60000 2,500:$0.56000 5,000:$0.53200 |
| PHT6N06T,135 | NXP Semiconductors | MOSFET N-CH 55V 5.5A SOT223 | 12,000 | 4,000:$0.21476 |
| PHT6N06T,135 | NXP Semiconductors | MOSFET N-CH 55V 5.5A SOT223 | 2,716 | 1:$0.75000 10:$0.65700 25:$0.58040 100:$0.50600 250:$0.44044 500:$0.37492 1,000:$0.30030 |
| BUK9Y12-55B,115 | NXP Semiconductors | MOSFET N-CH 55V 61.8A LFPAK | 0 | 1,500:$0.69400 3,000:$0.64800 7,500:$0.61600 10,500:$0.59200 37,500:$0.57400 75,000:$0.55500 |
| PSMN013-100BS,118 | NXP Semiconductors | MOSFET N CH 100V 68A D2PAK | 300 | 1:$1.66000 10:$1.46800 25:$1.32560 100:$1.16000 250:$1.01728 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 110V |
| 电流 - 连续漏极(Id) @ 25° C: | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 90 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 21nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 633pF @ 25V |
| 功率 - 最大: | 79W |
| 安装类型: | 通孔 |
| 封装/外壳: | TO-220-3 |
| 供应商设备封装: | TO-220AB |
| 包装: | 管件 |