| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PSMN014-60LS,115 | NXP Semiconductors | MOSFET N-CH 60V QFN3333 | 252 | 1:$1.00000 10:$0.88600 25:$0.80000 100:$0.70010 250:$0.61392 500:$0.54448 |
| PSMN013-100BS,118 | NXP Semiconductors | MOSFET N CH 100V 68A D2PAK | 300 | 1:$1.66000 10:$1.46800 25:$1.32560 100:$1.16000 250:$1.01728 |
| BUK7607-30B,118 | NXP Semiconductors | MOSFET N-CH 30V 75A D2PAK | 0 | 800:$0.81306 1,600:$0.73470 2,400:$0.68572 5,600:$0.65143 20,000:$0.62694 40,000:$0.60735 80,000:$0.58776 |
| PSMN014-60LS,115 | NXP Semiconductors | MOSFET N-CH 60V QFN3333 | 0 | 1,400:$0.41670 2,800:$0.38892 7,000:$0.36947 9,800:$0.35558 35,000:$0.34447 70,000:$0.33336 |
| BUK95180-100A,127 | NXP Semiconductors | MOSFET N-CH 100V 11A TO220AB | 3,000 | 1:$0.99000 10:$0.86300 25:$0.76400 100:$0.66560 250:$0.57928 500:$0.49300 1,000:$0.39440 2,500:$0.35742 5,000:$0.33278 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 60V |
| 电流 - 连续漏极(Id) @ 25° C: | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 14 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 19.6nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 1264pF @ 30V |
| 功率 - 最大: | 65W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-VDFN 裸露焊盘 |
| 供应商设备封装: | 8-QFN（3.3x3.3） |
| 包装: | 剪切带 (CT) |