| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SUD35N10-26P-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V DPAK | 6,000 | 2,000:$0.94500 6,000:$0.91000 10,000:$0.87500 50,000:$0.84000 |
| SI4004DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 374 | 1:$0.99000 25:$0.78000 100:$0.70200 250:$0.61100 500:$0.54600 1,000:$0.42900 |
| SI4004DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 374 | 1:$0.99000 25:$0.78000 100:$0.70200 250:$0.61100 500:$0.54600 1,000:$0.42900 |
| SI1400DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-6 | 495 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SI4004DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 0 | 2,500:$0.36400 5,000:$0.34580 12,500:$0.33150 25,000:$0.32240 62,500:$0.31200 |
| SI1400DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-6 | 495 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SIR882DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 2,836 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 2,836 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 0 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
| SI1400DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-6 | 0 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 5,945 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 5,945 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 3,000 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 100V |
| 电流 - 连续漏极(Id) @ 25° C: | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 26 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）: | 4.4V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 47nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 2000pF @ 12V |
| 功率 - 最大: | 83W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装: | TO-252，（D-Pak） |
| 包装: | 带卷 (TR) |