| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI4190DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 3,793 | 1:$2.77000 25:$2.13320 100:$1.93550 250:$1.73800 500:$1.50100 1,000:$1.26400 |
| SI4190DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 2,500 | 2,500:$1.06650 5,000:$1.02700 12,500:$0.98750 25,000:$0.96775 62,500:$0.94800 |
| IRFR210TRLPBF | Vishay Siliconix | MOSFET N-CH 200V 2.6A DPAK | 3,000 | 1:$1.06000 25:$0.81600 100:$0.72000 250:$0.62400 500:$0.52800 1,000:$0.42000 |
| IRFR210TRLPBF | Vishay Siliconix | MOSFET N-CH 200V 2.6A DPAK | 3,000 | 1:$1.06000 25:$0.81600 100:$0.72000 250:$0.62400 500:$0.52800 1,000:$0.42000 |
| IRFR210TRLPBF | Vishay Siliconix | MOSFET N-CH 200V 2.6A DPAK | 0 | 3,000:$0.34800 6,000:$0.32400 15,000:$0.31200 30,000:$0.30000 |
| SIR878DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 3,000 | 3,000:$0.91125 6,000:$0.87750 15,000:$0.84375 30,000:$0.82688 75,000:$0.81000 |
| SI4434DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 250V 8-SOIC | 7,150 | 1:$2.51000 25:$1.93880 100:$1.75910 250:$1.57960 500:$1.36420 1,000:$1.14880 |
| SI5476DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V PPAK CHIPFET | 13,451 | 1:$1.44000 25:$1.14000 100:$1.02600 250:$0.89300 500:$0.79800 1,000:$0.62700 |
| SI5476DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V PPAK CHIPFET | 13,451 | 1:$1.44000 25:$1.14000 100:$1.02600 250:$0.89300 500:$0.79800 1,000:$0.62700 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 100V |
| 电流 - 连续漏极(Id) @ 25° C: | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 8.8 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）: | 2.8V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 58nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 2000pF @ 50V |
| 功率 - 最大: | 7.8W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装: | 8-SOICN |
| 包装: | 剪切带 (CT) |