元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
IRF510STRRPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | 0 | 800:$0.55610 1,600:$0.50250 2,400:$0.46900 5,600:$0.44555 20,000:$0.42713 40,000:$0.41540 |
SIR804DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 8-SOIC | 5,465 | 1:$3.21000 25:$2.47880 100:$2.24910 250:$2.01960 500:$1.74420 1,000:$1.46880 |
SIR804DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 8-SOIC | 5,465 | 1:$3.21000 25:$2.47880 100:$2.24910 250:$2.01960 500:$1.74420 1,000:$1.46880 |
SIR804DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 8-SOIC | 3,000 | 3,000:$1.23930 6,000:$1.19340 15,000:$1.14750 30,000:$1.12455 75,000:$1.10160 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 标准 |
漏极至源极电压(Vdss): | 100V |
电流 - 连续漏极(Id) @ 25° C: | 5.6A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 540 毫欧 @ 3.4A,10V |
Id 时的 Vgs(th)(最大): | 4V @ 250µA |
闸电荷(Qg) @ Vgs: | 8.3nC @ 10V |
输入电容 (Ciss) @ Vds: | 180pF @ 25V |
功率 - 最大: | 3.7W |
安装类型: | 表面贴装 |
封装/外壳: | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
供应商设备封装: | TO-263(D2Pak) |
包装: | 带卷 (TR) |