| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI7309DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 8A 1212-8 PPAK | 6,055 | 1:$1.14000 25:$0.90000 100:$0.81000 250:$0.70500 500:$0.63000 1,000:$0.49500 |
| SI7309DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 8A 1212-8 PPAK | 6,055 | 1:$1.14000 25:$0.90000 100:$0.81000 250:$0.70500 500:$0.63000 1,000:$0.49500 |
| SI7309DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 8A 1212-8 PPAK | 3,000 | 3,000:$0.42000 6,000:$0.39900 15,000:$0.38250 30,000:$0.37200 75,000:$0.36000 |
| SI1330EDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V SC-70-3 | 0 | 3,000:$0.17670 6,000:$0.16530 15,000:$0.15390 30,000:$0.14535 75,000:$0.14250 150,000:$0.13680 |
| SI1305DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH G-S 8V SC-70-3 | 212 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET P 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 60V |
| 电流 - 连续漏极(Id) @ 25° C: | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 115 毫欧 @ 3.9A，10V |
| Id 时的 Vgs(th)（最大）: | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 22nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 600pF @ 30V |
| 功率 - 最大: | 19.8W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | PowerPAK? 1212-8 |
| 供应商设备封装: | PowerPAK? 1212-8 |
| 包装: | Digi-Reel® |