| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SIS414DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 1212-8 PPAK | 3,000 | 3,000:$0.30450 6,000:$0.28350 15,000:$0.27300 30,000:$0.26250 75,000:$0.25830 150,000:$0.25200 |
| SI7619DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1212-8 PPAK | 3,953 | 1:$0.92000 25:$0.71400 100:$0.63000 250:$0.54600 500:$0.46200 1,000:$0.36750 |
| SI7619DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1212-8 PPAK | 3,953 | 1:$0.92000 25:$0.71400 100:$0.63000 250:$0.54600 500:$0.46200 1,000:$0.36750 |
| SIS406DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1212-8 PPAK | 6,176 | 1:$0.90000 25:$0.69720 100:$0.61500 250:$0.53300 500:$0.45100 1,000:$0.35875 |
| SIS406DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1212-8 PPAK | 6,176 | 1:$0.90000 25:$0.69720 100:$0.61500 250:$0.53300 500:$0.45100 1,000:$0.35875 |
| SIS406DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1212-8 PPAK | 3,000 | 3,000:$0.29725 6,000:$0.27675 15,000:$0.26650 30,000:$0.25625 75,000:$0.25215 150,000:$0.24600 |
| SI4487DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 4,529 | 1:$0.88000 25:$0.68000 100:$0.60000 250:$0.52000 500:$0.44000 1,000:$0.35000 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 16 毫欧 @ 10A，4.5V |
| Id 时的 Vgs(th)（最大）: | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 33nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 795pF @ 15V |
| 功率 - 最大: | 31W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | PowerPAK? 1212-8 |
| 供应商设备封装: | PowerPAK? 1212-8 |
| 包装: | 带卷 (TR) |