元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V SC-70-6 | 5,927 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V SC-70-6 | 3,000 | 3,000:$0.26100 6,000:$0.24300 15,000:$0.23400 30,000:$0.22500 75,000:$0.22140 150,000:$0.21600 |
SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 4,538 | 1:$0.71000 25:$0.55080 100:$0.48600 250:$0.42120 500:$0.35640 1,000:$0.28350 |
SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 4,538 | 1:$0.71000 25:$0.55080 100:$0.48600 250:$0.42120 500:$0.35640 1,000:$0.28350 |
SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 3,000 | 3,000:$0.25467 |
SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 8,442 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 8,442 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET P 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 20V |
电流 - 连续漏极(Id) @ 25° C: | 12A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 18 毫欧 @ 7.6A,4.5V |
Id 时的 Vgs(th)(最大): | 1.2V @ 250µA |
闸电荷(Qg) @ Vgs: | 75nC @ 8V |
输入电容 (Ciss) @ Vds: | - |
功率 - 最大: | 19W |
安装类型: | 表面贴装 |
封装/外壳: | PowerPAK? SC-70-6 |
供应商设备封装: | PowerPAK? SC-70-6 单 |
包装: | 剪切带 (CT) |