| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI1021R-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 190MA SC-75A | 9,000 | 3,000:$0.16000 |
| SI1422DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 4A SC70-6 | 4,364 | 1:$0.55000 25:$0.38520 100:$0.33000 250:$0.28500 500:$0.24500 1,000:$0.19000 |
| SI1422DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 4A SC70-6 | 4,364 | 1:$0.55000 25:$0.38520 100:$0.33000 250:$0.28500 500:$0.24500 1,000:$0.19000 |
| SI1422DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 4A SC70-6 | 3,000 | 3,000:$0.15500 6,000:$0.14500 15,000:$0.13500 30,000:$0.12750 75,000:$0.12500 150,000:$0.12000 |
| SI3460DDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 6-TSOP | 4,808 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET P 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 60V |
| 电流 - 连续漏极(Id) @ 25° C: | 190mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 4 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）: | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 1.7nC @ 15V |
| 输入电容 (Ciss) @ Vds: | 23pF @ 25V |
| 功率 - 最大: | 250mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | SC-75A |
| 供应商设备封装: | SC-75A |
| 包装: | 带卷 (TR) |