| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI3460DDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 6-TSOP | 4,808 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| SI3460DDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 6-TSOP | 3,000 | 3,000:$0.13950 6,000:$0.13050 15,000:$0.12150 30,000:$0.11475 75,000:$0.11250 150,000:$0.10800 |
| SUM90N08-6M2P-E3 | Vishay Siliconix | MOSFET N-CH D-S 75V D2PAK | 2,148 | 1:$2.97000 25:$2.29240 100:$2.08010 250:$1.86780 |
| SUM90N08-6M2P-E3 | Vishay Siliconix | MOSFET N-CH D-S 75V D2PAK | 800 | 800:$1.35600 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 7.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 28 毫欧 @ 5.1A，4.5V |
| Id 时的 Vgs(th)（最大）: | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 18nC @ 8V |
| 输入电容 (Ciss) @ Vds: | 666pF @ 10V |
| 功率 - 最大: | 2.7W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 6-TSOP（0.065"，1.65mm 宽） |
| 供应商设备封装: | 6-TSOP |
| 包装: | 剪切带 (CT) |