元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
STH240N75F3-6 | STMicroelectronics | MOSFET N-CH 75V 180A H2PAK | 0 | 1,000:$3.30400 2,000:$3.13880 5,000:$3.02080 10,000:$2.92640 25,000:$2.83200 |
STF57N65M5 | STMicroelectronics | MOSFET N-CH 650V 42A TO-220FP | 993 | 1:$11.75000 10:$10.68000 25:$9.87920 100:$9.07800 250:$8.27700 500:$7.74300 1,000:$7.10220 2,500:$6.83520 5,000:$6.62160 |
STI30N65M5 | STMicroelectronics | MOSFET N-CH 650V 22A I2PAK | 1,000 | 1:$6.80000 10:$6.07500 25:$5.46760 100:$4.98150 250:$4.49548 500:$4.03380 1,000:$3.40200 2,500:$3.23190 5,000:$3.11040 |
STH210N75F6-2 | STMicroelectronics | MOSFET N-CH 75V 180A H2PAK-2 | 0 | 1,000:$3.43000 2,000:$3.25850 5,000:$3.13600 10,000:$3.03800 25,000:$2.94000 |
STP34N65M5 | STMicroelectronics | MOSFET N-CH 650V 29A TO-220 | 1,000 | 1:$9.03000 10:$8.12300 25:$7.40040 100:$6.67850 250:$6.13700 500:$5.59550 1,000:$4.87350 2,500:$4.69300 5,000:$4.51250 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 75V |
电流 - 连续漏极(Id) @ 25° C: | 180A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 3 毫欧 @ 90A,10V |
Id 时的 Vgs(th)(最大): | 4V @ 250µA |
闸电荷(Qg) @ Vgs: | 100nC @ 10V |
输入电容 (Ciss) @ Vds: | 6800pF @ 25V |
功率 - 最大: | 300W |
安装类型: | 表面贴装 |
封装/外壳: | TO-263-7,D²Pak(6 引线+接片) |
供应商设备封装: | H²PAK |
包装: | 带卷 (TR) |