分离式半导体产品 STB16N65M5品牌、价格、PDF参数

STB16N65M5 • 品牌、价格
元器件型号 厂商 描述 数量 价格
STB16N65M5 STMicroelectronics MOSFET N-CH 650V 12A D2PAK 956 1:$3.89000
10:$3.48300
25:$3.13200
100:$2.84850
250:$2.57852
500:$2.30850
STB16N65M5 STMicroelectronics MOSFET N-CH 650V 12A D2PAK 0 1,000:$1.89000
2,000:$1.79550
5,000:$1.72800
10,000:$1.67400
25,000:$1.62000
STF19NM50N STMicroelectronics MOSFET N-CH 500V 14A TO-220FP 969 1:$3.79000
10:$3.38800
25:$3.04880
100:$2.77780
250:$2.50676
500:$2.24930
1,000:$1.89700
2,500:$1.80215
5,000:$1.73440
STF18N65M5 STMicroelectronics MOSFET N-CH 650V 15A TO-220FP 990 1:$3.75000
10:$3.35000
25:$3.01520
100:$2.74700
250:$2.47900
500:$2.22440
1,000:$1.87600
2,500:$1.78220
5,000:$1.71520
STL24NM60N STMicroelectronics MOSFET N-CH 600V 16A POWERFLAT 8,937 1:$7.35000
10:$6.61200
25:$6.01360
100:$5.44350
250:$4.98752
500:$4.56000
1,000:$3.96150
STL35N6F3 STMicroelectronics MOSFET N-CH 60V 44A POWERFLAT 3,000 1:$1.85000
10:$1.67000
25:$1.49640
100:$1.34560
250:$1.19480
500:$1.04400
1,000:$0.86420
STB16N65M5 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 650V
电流 - 连续漏极(Id) @ 25° C: 12A
开态Rds(最大)@ Id, Vgs @ 25° C: 299 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 31nC @ 10V
输入电容 (Ciss) @ Vds: 1250pF @ 100V
功率 - 最大: 90W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D²PAK
包装: 剪切带 (CT)