| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| STH180N10F3-6 | STMicroelectronics | MOSFET N-CH 100V 180A H2PAK | 0 | 1,000:$2.61800 2,000:$2.48710 5,000:$2.39360 10,000:$2.31880 25,000:$2.24400 |
| STL85N6F3 | STMicroelectronics | MOSFET N-CH 60V 85A POWERFLAT5X6 | 695 | 1:$3.33000 10:$2.98000 25:$2.67960 100:$2.43710 250:$2.20604 500:$1.97506 1,000:$1.66320 |
| STL85N6F3 | STMicroelectronics | MOSFET N-CH 60V 85A POWERFLAT5X6 | 695 | 1:$3.33000 10:$2.98000 25:$2.67960 100:$2.43710 250:$2.20604 500:$1.97506 1,000:$1.66320 |
| STL85N6F3 | STMicroelectronics | MOSFET N-CH 60V 85A POWERFLAT5X6 | 0 | 3,000:$1.53600 6,000:$1.47800 15,000:$1.43200 30,000:$1.38600 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 100V |
| 电流 - 连续漏极(Id) @ 25° C: | 180A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 4.5 毫欧 @ 60A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 114.6nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 6665pF @ 25V |
| 功率 - 最大: | 315W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-263-7，D²Pak（6 引线+接片） |
| 供应商设备封装: | H²PAK |
| 包装: | 带卷 (TR) |