| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| FDD86252 | Fairchild Semiconductor | MOSFET N-CH 150V 5A DPAK | 3,774 | 1:$1.60000 10:$1.44000 25:$1.29000 100:$1.16000 250:$1.03000 500:$0.90000 1,000:$0.74500 |
| FDD86252 | Fairchild Semiconductor | MOSFET N-CH 150V 5A DPAK | 2,500 | 2,500:$0.67500 5,000:$0.65000 12,500:$0.62500 25,000:$0.61500 62,500:$0.60000 |
| FDMS7572S | Fairchild Semiconductor | MOSFET N-CH 25V 23A POWER56 | 2,893 | 1:$1.60000 10:$1.44000 25:$1.29000 100:$1.16000 250:$1.03000 500:$0.90000 1,000:$0.74500 |
| FDMS7572S | Fairchild Semiconductor | MOSFET N-CH 25V 23A POWER56 | 2,893 | 1:$1.60000 10:$1.44000 25:$1.29000 100:$1.16000 250:$1.03000 500:$0.90000 1,000:$0.74500 |
| FDMS7572S | Fairchild Semiconductor | MOSFET N-CH 25V 23A POWER56 | 0 | 3,000:$0.67500 6,000:$0.65000 15,000:$0.62500 30,000:$0.61500 75,000:$0.60000 |
| FDD8453LZ_F085 | Fairchild Semiconductor | MOSFET N-CH 40V DPAK | 0 | 2,500:$0.68850 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 150V |
| 电流 - 连续漏极(Id) @ 25° C: | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 52 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 16nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 985pF @ 75V |
| 功率 - 最大: | 3.1W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装: | TO-252-3 |
| 包装: | 剪切带 (CT) |