| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PMV60EN,215 | NXP Semiconductors | MOSFET N-CH 30V 4.7A SOT-23 | 12,000 | 3,000:$0.14260 6,000:$0.13570 |
| PMV60EN,215 | NXP Semiconductors | MOSFET N-CH 30V 4.7A SOT-23 | 11,355 | 1:$0.56000 10:$0.47400 25:$0.41520 100:$0.35540 250:$0.30820 500:$0.26106 1,000:$0.20125 |
| PMV60EN,215 | NXP Semiconductors | MOSFET N-CH 30V 4.7A SOT-23 | 11,355 | 1:$0.56000 10:$0.47400 25:$0.41520 100:$0.35540 250:$0.30820 500:$0.26106 1,000:$0.20125 |
| PMV60EN,215 | NXP Semiconductors | MOSFET N-CH 30V 4.7A SOT-23 | 9,000 | 3,000:$0.17800 6,000:$0.16700 15,000:$0.15500 30,000:$0.14700 75,000:$0.14400 150,000:$0.13800 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 4.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 55 毫欧 @ 2A，10V |
| Id 时的 Vgs(th)（最大）: | 2V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 9.4nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 350pF @ 30V |
| 功率 - 最大: | 2W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装: | TO-236AB |
| 包装: | 带卷 (TR) |