| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| DMN2300UFD-7 | Diodes Inc | MOSFET N-CH 20V 1.73A 3UDFN | 5,925 | 1:$0.42000 10:$0.32800 25:$0.27680 100:$0.22560 250:$0.18688 500:$0.15438 1,000:$0.11563 |
| DMN2300UFD-7 | Diodes Inc | MOSFET N-CH 20V 1.73A 3UDFN | 5,925 | 1:$0.42000 10:$0.32800 25:$0.27680 100:$0.22560 250:$0.18688 500:$0.15438 1,000:$0.11563 |
| DMN2300UFD-7 | Diodes Inc | MOSFET N-CH 20V 1.73A 3UDFN | 3,000 | 3,000:$0.10313 6,000:$0.09688 15,000:$0.09063 30,000:$0.08313 75,000:$0.08000 150,000:$0.07688 |
| DMP21D0UFD-7 | Diodes Inc | MOS P CH 20V 1.14A X1-DFN1212-3 | 6,000 | 1:$0.55000 10:$0.38800 25:$0.31880 100:$0.25480 250:$0.18564 500:$0.15076 1,000:$0.11588 |
| DMP21D0UFD-7 | Diodes Inc | MOS P CH 20V 1.14A X1-DFN1212-3 | 6,000 | 1:$0.55000 10:$0.38800 25:$0.31880 100:$0.25480 250:$0.18564 500:$0.15076 1,000:$0.11588 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 1.21A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 200 毫欧 @ 900mA，4.5V |
| Id 时的 Vgs(th)（最大）: | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs: | 2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | 67.62pF @ 25V |
| 功率 - 最大: | 470mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 3-UDFN |
| 供应商设备封装: | X1-DFN1212-3 |
| 包装: | Digi-Reel® |