| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| DMS3014SSS-13 | Diodes Inc | MOSFET N-CH 30V 11A SO8 | 4,908 | 1:$0.51000 10:$0.43300 25:$0.37920 100:$0.32450 250:$0.28140 500:$0.23836 1,000:$0.18375 |
| DMP57D5UFB-7 | Diodes Inc | MOSFET P-CH 50V 200MA 3-DFN | 3,000 | 3,000:$0.12375 6,000:$0.11625 15,000:$0.10875 30,000:$0.09975 75,000:$0.09600 150,000:$0.09225 |
| DMN3730U-7 | Diodes Inc | MOSFET N-CH 30V 750MA SOT23 | 4,528 | 1:$0.50000 10:$0.39400 25:$0.33240 100:$0.27080 250:$0.22424 500:$0.18526 1,000:$0.13875 |
| DMS3014SSS-13 | Diodes Inc | MOSFET N-CH 30V 11A SO8 | 4,908 | 1:$0.51000 10:$0.43300 25:$0.37920 100:$0.32450 250:$0.28140 500:$0.23836 1,000:$0.18375 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，肖特基，金属氧化物! |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 10.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 13 毫欧 @ 10.4A，10V |
| Id 时的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 45.7nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 2296pF @ 15V |
| 功率 - 最大: | 1.55W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装: | 8-SO |
| 包装: | Digi-Reel® |