元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
DMN2300U-7 | Diodes Inc | MOSFET N-CH 20V 1.24A SOT23 | 3,000 | 3,000:$0.12375 6,000:$0.11625 15,000:$0.10875 30,000:$0.09975 75,000:$0.09600 150,000:$0.09225 |
DMP1096UCB4-7 | Diodes Inc | MOSFET P-CH 12V 2.6A 4-UFCSP | 6,000 | 1:$0.50000 10:$0.39400 25:$0.33240 100:$0.27080 250:$0.22424 500:$0.18526 1,000:$0.13875 |
DMP1096UCB4-7 | Diodes Inc | MOSFET P-CH 12V 2.6A 4-UFCSP | 6,000 | 1:$0.50000 10:$0.39400 25:$0.33240 100:$0.27080 250:$0.22424 500:$0.18526 1,000:$0.13875 |
DMP1096UCB4-7 | Diodes Inc | MOSFET P-CH 12V 2.6A 4-UFCSP | 6,000 | 3,000:$0.12375 6,000:$0.11625 15,000:$0.10875 30,000:$0.09975 75,000:$0.09600 150,000:$0.09225 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 20V |
电流 - 连续漏极(Id) @ 25° C: | 1.24A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 175 毫欧 @ 300mA,4.5V |
Id 时的 Vgs(th)(最大): | 950mV @ 250µA |
闸电荷(Qg) @ Vgs: | 1.6nC @ 4.5V |
输入电容 (Ciss) @ Vds: | 64.3pF @ 25V |
功率 - 最大: | 430mW |
安装类型: | 表面贴装 |
封装/外壳: | TO-236-3,SC-59,SOT-23-3 |
供应商设备封装: | SOT-23 |
包装: | 带卷 (TR) |