| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| BSC883N03MS G | Infineon Technologies | MOSFET N-CH 30V 98A TDSON-8 | 10,000 | 1:$1.33000 10:$1.18900 25:$1.04960 100:$0.94450 250:$0.82204 500:$0.73458 1,000:$0.57717 2,500:$0.54219 |
| BSC883N03MS G | Infineon Technologies | MOSFET N-CH 30V 98A TDSON-8 | 10,000 | 1:$1.33000 10:$1.18900 25:$1.04960 100:$0.94450 250:$0.82204 500:$0.73458 1,000:$0.57717 2,500:$0.54219 |
| BSC883N03MS G | Infineon Technologies | MOSFET N-CH 30V 98A TDSON-8 | 10,000 | 5,000:$0.46523 10,000:$0.44600 25,000:$0.43375 50,000:$0.41976 |
| BSC883N03LS G | Infineon Technologies | MOSFET N-CH 30V 98A TDSON-8 | 10,000 | 1:$1.33000 10:$1.18900 25:$1.04960 100:$0.94450 250:$0.82204 500:$0.73458 1,000:$0.57717 2,500:$0.54219 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 34V |
| 电流 - 连续漏极(Id) @ 25° C: | 98A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 3.8 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）: | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 41nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 3200pF @ 15V |
| 功率 - 最大: | 57W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-PowerTDFN |
| 供应商设备封装: | PG-TDSON-8 |
| 包装: | Digi-Reel® |