分离式半导体产品 BAR 63-02L E6433品牌、价格、PDF参数

BAR 63-02L E6433 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BAR 63-02L E6433 Infineon Technologies DIODE RF SGL 50V 100MA TSLP-2 0
BAR 63-02W E6127 Infineon Technologies DIODE RF SGL 50V 100MA SCD-80 0
BAR 63-02W E6327 Infineon Technologies DIODE RF SGL 50V 100MA SCD-80 0
BAR 63-03W E6433 Infineon Technologies DIODE RF SGL 50V 100MA SOD-323 0
BAR 63-04W E6327 Infineon Technologies DIODE SCHOTTKY 25V 100MA SOT-323 0
BAR 63-05 E6433 Infineon Technologies DIODE RF CC 50V 100MA SOT-23 0
BAR 63-05W E6327 Infineon Technologies DIODE SCHOTTKY 25V 100MA SOT-323 0
BAR 64-02V E6127 Infineon Technologies DIODE RF SGL 150V 100MA SC-79 0
BAR 64-04W E6327 Infineon Technologies DIODE RF SER 150V 100MA SOT-323 0
BAR 64-05W E6433 Infineon Technologies DIODE RF CC 150V 100MA SOT-323 0
BAR 65-02L E6327 Infineon Technologies DIODE RF SGL 30V 100MA TSLP-2 0
BAR 65-02V E6327 Infineon Technologies DIODE RF SGL 30V 100MA SC-79 0
BAR 88-02LRH E6433 Infineon Technologies DIODE PIN SGL 80V 100MA TSLP-2-7 0
BAR 90-099LRH E6327 Infineon Technologies DIODE PIN ANTI 80V 100MA TSLP4-7 0
BAT 15-05W E6327 Infineon Technologies DIODE SCHOTTKY 4V 110MA SOT-323 0
BAT 17-04W E6327 Infineon Technologies DIODE SCHOTTKY RF SERIES SOT-323 0
BAR 63-02L E6433 • PDF参数
类别: 分离式半导体产品
电压 - 峰值反向(最大): 50V
电流 - 最大: 100mA
电容@ Vr, F: 0.3pF @ 5V,1MHz
电阻@ Vr, F: 1 欧姆 @ 10mA,100MHz
功率耗散(最大): 250mW
封装/外壳: 2-SMD,无引线
供应商设备封装: PG-TSLP-2
包装: 带卷 (TR)