半导体模块 APTGV100H60T3G品牌、价格、PDF参数

APTGV100H60T3G • 品牌、价格
元器件型号 厂商 描述 数量 价格
APTGV100H60T3G Microsemi Power Products Group IGBT NPT BST CHOP FULL BRDG SP3 0 12:$68.53750
APTGF50DU120TG Microsemi Power Products Group IGBT MODULE NPT DUAL SP4 0 12:$69.14417
APTGT200DA120G Microsemi Power Products Group IGBT 1200V 280A 890W SP6 0 10:$127.19500
APTGT200SK120G Microsemi Power Products Group IGBT 1200V 280A 890W SP6 0 10:$127.19500
APTGT300DA60G Microsemi Power Products Group IGBT 600V 430A 1150W SP6 0 10:$127.59200
APTGT300SK60G Microsemi Power Products Group IGBT 600V 430A 1150W SP6 0 10:$127.59200
APTGF350DA60G Microsemi Power Products Group IGBT 600V 430A 1562W SP6 0 10:$130.20400
APTGF350SK60G Microsemi Power Products Group IGBT 600V 430A 1562W SP6 0 10:$130.20400
APTGT75TA60PG Microsemi Power Products Group IGBT MOD TRENCH 3PHASE LEG SP6-P 0 10:$130.63000
APTGT75TDU60PG Microsemi Power Products Group IGBT MOD TRPL DUAL SOURCE SP6-P 0 10:$130.63000
APTGT400DA60D3G Microsemi Power Products Group IGBT 600V 500A 1250W D3 0 10:$132.42000
APTGT400SK60D3G Microsemi Power Products Group IGBT 600V 500A 1250W D3 0 10:$132.42000
APTGT150DA170G Microsemi Power Products Group IGBT 1700V 250A 890W SP6 0 10:$132.59700
APTGT150SK170G Microsemi Power Products Group IGBT 1700V 250A 890W SP6 0 10:$132.59700
APTGT200DH60G Microsemi Power Products Group IGBT MOD TRENCH ASYM BRIDGE SP6 0 10:$134.62200
APTGV100H60T3G • PDF参数
类别: 半导体模块
IGBT 类型: NPT、沟道和场截止
配置: 全桥反相器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 1.9V @ 15V,100A
电流 - 集电极 (Ic)(最大): 150A
电流 - 集电极截止(最大): 250µA
Vce 时的输入电容 (Cies): 6.1nF @ 25V
功率 - 最大: 340W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: SP3
供应商设备封装: SP3