| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| APTGT75H60T2G | Microsemi Power Products Group | POWER MOD IGBT3 FULL BRIDGE SP2 | 10 | 1:$66.52000 10:$62.60800 100:$55.75980 250:$52.82508 500:$50.86862 1,000:$48.91213 2,500:$47.93388 5,000:$46.95564 |
| APTGT100DA170TG | Microsemi Power Products Group | IGBT 1700V 150A 560W SP4 | 0 | 10:$80.01600 |
| APTGT150DA120TG | Microsemi Power Products Group | IGBT 1200V 200A 690W SP4 | 0 | 10:$80.00000 |
| APTGT75A120TG | Microsemi Power Products Group | IGBT MOD TRENCH PHASE LEG SP4 | 0 | 10:$78.90300 |
| APTGT75DU120TG | Microsemi Power Products Group | IGBT MOD TRENCH DUAL SOURCE SP4 | 0 | 10:$78.81000 |
| APTGT50DU170TG | Microsemi Power Products Group | IGBT MOD TRENCH DUAL SOURCE SP4 | 0 | 10:$78.19200 |
| APTGT75X60T3G | Microsemi Power Products Group | IGBT MOD TRENCH 3PH BRIDGE SP3 | 0 | 11:$73.98182 |
| APTGT50DU120TG | Microsemi Power Products Group | IGBT MOD TRENCH DUAL SOURCE SP4 | 0 | 11:$73.27909 |
| APTGT100A120TG | Microsemi Power Products Group | IGBT MODULE TRENCH PH LEG SP4 | 0 | 10:$89.33200 |
| 类别: | 半导体模块 |
|---|---|
| IGBT 类型: | 沟道和场截止 |
| 配置: | 全桥反相器 |
| 电压 - 集电极发射极击穿（最大）: | 600V |
| Vge, Ic时的最大Vce（开）: | 1.9V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）: | 100A |
| 电流 - 集电极截止（最大）: | 250µA |
| Vce 时的输入电容 (Cies): | 4.62nF @ 25V |
| 功率 - 最大: | 250W |
| 输入: | 标准 |
| NTC 热敏电阻: | 是 |
| 安装类型: | * |
| 封装/外壳: | * |
| 供应商设备封装: | * |