分离式半导体产品 BF 999 E6433品牌、价格、PDF参数
BF 999 E6433 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| BF 999 E6433 |
Infineon Technologies |
MOSFET N-CH 20V 30MA SOT-23 |
0 |
10,000:$0.13757
|
| BF 999 E6327 |
Infineon Technologies |
MOSFET N-CH RF 20V 30MA SOT-23 |
0 |
9,000:$0.14776
|
| PTFA070601E V4 R250 |
Infineon Technologies |
FET RF LDMOS 60W H36265-2 |
0 |
250:$38.98440
|
| PTFA080551E V4 R250 |
Infineon Technologies |
IC FET RF LDMOS 55W H-36265-2 |
0 |
250:$40.00360
|
| PTFA190451F V4 R250 |
Infineon Technologies |
IC FET RF LDMOS 45W H-37265-2 |
0 |
250:$40.76800
|
| PTFA071701E V4 R250 |
Infineon Technologies |
FET RF LDMOS 170W H36248-2 |
0 |
250:$59.18368
|
| PTFA072401EL V4 R250 |
Infineon Technologies |
FET RF LDMOS 240W H33288-2 |
0 |
250:$94.64000
|
| PTFA092211EL V4 R250 |
Infineon Technologies |
FET RF LDMOS 220W H33288-3 |
0 |
250:$94.64000
|
| PTFA082201E V4 R250 |
Infineon Technologies |
IC FET RF LDMOS 220W H-36260-2 |
0 |
250:$98.88516
|
| PTFA082201F V4 R250 |
Infineon Technologies |
IC FET RF LDMOS 220W H-37260-2 |
0 |
250:$98.88516
|
| PTFA092211EL V4 |
Infineon Technologies |
FET RF LDMOS 220W H33288-2 |
0 |
40:$103.74000
|
| PTFA082201E V4 |
Infineon Technologies |
IC FET RF LDMOS 220W H-36260-2 |
0 |
35:$105.60543
|
| PTFA092201E V4 |
Infineon Technologies |
IC FET RF LDMOS 220W H-36260-2 |
0 |
35:$105.60543
|
| PTFA082201F V4 |
Infineon Technologies |
IC FET RF LDMOS 220W H-37260-2 |
0 |
40:$105.60550
|
| PTFA092201F V4 |
Infineon Technologies |
IC FET RF LDMOS 220W H-37260-2 |
0 |
40:$105.60550
|
| PTFA212001E V4 R250 |
Infineon Technologies |
IC FET RF LDMOS 200W H-36260-2 |
0 |
250:$127.58996
|
| PTFA212001F V4 R250 |
Infineon Technologies |
IC FET RF LDMOS 200W H-37260-2 |
0 |
250:$127.58996
|
| PTFA192401F V4 R250 |
Infineon Technologies |
IC FET RF LDMOS 240W H-37260-2 |
0 |
250:$132.73260
|
| PTFA211801E V5 |
Infineon Technologies |
FET RF LDMOS 180W H36260-2 |
0 |
35:$133.50829
|
| PTFA192001E V4 |
Infineon Technologies |
IC FET RF LDMOS 200W H-36260-2 |
0 |
35:$136.26114
|
| PTFA212001E V4 |
Infineon Technologies |
IC FET RF LDMOS 200W H-36260-2 |
0 |
35:$136.26114
|
| PTFA212001F V4 |
Infineon Technologies |
IC FET RF LDMOS 200W H-37260-2 |
0 |
40:$136.26125
|
| PTFA192401F V4 |
Infineon Technologies |
IC FET RF LDMOS 240W H-37260-2 |
0 |
40:$138.45825
|
| PTFA192401E V4 |
Infineon Technologies |
IC FET RF LDMOS 240W H-36260-2 |
0 |
35:$138.45829
|
BF 999 E6433 • PDF参数
| 类别: |
分离式半导体产品
|
| 晶体管类型: |
N 通道
|
| 频率: |
45MHz
|
| 增益: |
27dB
|
| 电压 - 测试: |
10V
|
| 额定电流: |
30mA
|
| 噪音数据: |
2.1dB
|
| 电流 - 测试: |
10mA
|
| 功率 - 输出: |
-
|
| 电压 - 额定: |
20V
|
| 封装/外壳: |
TO-236-3，SC-59，SOT-23-3
|
| 供应商设备封装: |
PG-SOT23-3
|
| 包装: |
带卷 (TR)
|