元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SIA914DJ-T1-E3 | Vishay Siliconix | MOFSET DUAL N-CH 20V SC70-6 | 0 | 1:$0.86000 25:$0.66480 100:$0.58650 250:$0.50832 500:$0.43010 1,000:$0.34213 |
SIB911DK-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V PWRPAK SC75-6 | 0 | 3,000:$0.29400 6,000:$0.27930 12,000:$0.27300 24,000:$0.26250 51,000:$0.25830 99,000:$0.25200 |
SIB911DK-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V PWRPAK SC75-6 | 0 | 1:$0.79000 25:$0.60680 100:$0.53550 250:$0.46412 500:$0.39270 1,000:$0.31238 |
SIB911DK-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V PWRPAK SC75-6 | 0 | 1:$0.79000 25:$0.60680 100:$0.53550 250:$0.46412 500:$0.39270 1,000:$0.31238 |
SQJ964EP-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 60V PPAK 8SOIC | 0 | 3,000:$1.28250 |
SI7964DP-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 60V PPAK 8SOIC | 0 | 3,000:$1.16100 |
SI4933DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL 12V 8-SOIC | 0 | 2,500:$1.10700 |
SI4818DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V 8-SOIC | 0 | 2,500:$1.10700 |
SI4816DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V 8-SOIC | 0 | 2,500:$1.10700 |
SI4562DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 8-SOIC | 0 | 2,500:$1.09755 |
SQJ844EP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$1.08000 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | 2 个 N 沟道(双) |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 20V |
电流 - 连续漏极(Id) @ 25° C: | 4.5A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 53 毫欧 @ 3.7A,4.5V |
Id 时的 Vgs(th)(最大): | 1V @ 250µA |
闸电荷(Qg) @ Vgs: | 11.5nC @ 8V |
输入电容 (Ciss) @ Vds: | 400pF @ 10V |
功率 - 最大: | 1.9W |
安装类型: | 表面贴装 |
封装/外壳: | PowerPAK? SC-70-6 双 |
供应商设备封装: | PowerPAK? SC-70-6 双 |
包装: | Digi-Reel® |