| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI4542DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 8-SOIC | 0 | 2,500:$0.79110 |
| SI4966DY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 20V 8SOIC | 0 | 2,500:$0.77625 |
| SQJ941EP-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 30V PPAK 8SOIC | 0 | 3,000:$0.76950 |
| SI4388DY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 8-SOIC | 0 | 2,500:$0.76950 |
| SI6975DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL G-S 12V 8TSSOP | 0 | 3,000:$0.74250 |
| SI6973DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL G-S 20V 8TSSOP | 0 | 3,000:$0.74250 |
| SI4814BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH/SCHOTTKY 30V 8SOIC | 0 | 2,500:$0.71550 |
| SI4967DY-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 12V 8SOIC | 0 | 2,500:$0.71145 |
| SI4965DY-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 8V 8SOIC | 0 | 2,500:$0.69390 |
| SI7980DP-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 20V 8A PPAK 8SOIC | 0 | 3,000:$0.68850 |
| SI4944DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V 8-SOIC | 0 | 2,500:$0.67905 |
| SI4569DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 8-SOIC | 0 | 2,500:$0.67905 |
| SI7904DN-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH D-S 20V 1212-8 | 0 | 3,000:$0.67200 |
| SI7214DN-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH D-S 30V 1212-8 | 0 | 3,000:$0.67200 |
| SI7228DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PWRPAK 1212-8 | 0 | 3,000:$0.61600 |
| SIZ720DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 0 | 3,000:$0.60900 |
| SIZ710DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 5 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
| SIZ710DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 5 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | N 和 P 沟道 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | - |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 25 毫欧 @ 6.9A，10V |
| Id 时的 Vgs(th)（最大）: | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds: | - |
| 功率 - 最大: | - |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装: | 8-SOICN |
| 包装: | 带卷 (TR) |